PZT5551L3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PZT5551L3

Código: G1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-223

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PZT5551L3 datasheet

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 pzt5551l3.pdf pdf_icon

PZT5551L3

Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2008.07.04 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3 Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

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 pzt5551.pdf pdf_icon

PZT5551L3

UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reel www.unisonic.com.tw 1of 4 Copyright 20

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 pzt5551.pdf pdf_icon

PZT5551L3

PZT5551 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 160 VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 600 mA PD Total Device Disspation 1.5 W

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 pzt559a.pdf pdf_icon

PZT5551L3

PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-223 The PZT559A is designed for general purpose switching and amplifier applications. FEATURES 4 Amps continuous current, up to 10 Amps peak current. Excellent gain characteristic specified up to

MOSTRAR MÁS

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