PZT5551L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PZT5551L3
Código: G1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de transistor bipolar PZT5551L3
PZT5551L3 Datasheet (PDF)
pzt5551l3.pdf
Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2008.07.04 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor PZT5551L3Description The PZT5551L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT
pzt5551.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT5551L-x-AA3-R PZT5551G-x-AA3-R SOT-223 B C E Tape Reelwww.unisonic.com.tw 1of 4 Copyright 20
pzt5551.pdf
PZT5551NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11 233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V160VCBOCollector-Base Voltage 180 VVEBOEmitter-Base Voltage 6 VICCollector Current (DC) 600 mAPDTotal Device Disspation 1.5 W
pzt559a.pdf
PZT559A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-223 The PZT559A is designed for general purpose switching and amplifier applications. FEATURES 4 Amps continuous current, up to 10 Amps peak current. Excellent gain characteristic specified up to
pzt559.pdf
PZT559PNP Silicon Planar Elektronische Bauelemente High Current TransistorRoHS Compliant ProductSOT-223Description The PZT559 is designed for general purpose switching and amplifier applications.Features * Excellent Gain Characteristic Specified Up To 3 Amps.MillimeterMillimeterREF. REF. * 4 Amps Continuous Current, Up To Min. Max. Min. Max. 10 Amps Peak Cu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BTNA44A3 | 2SC3124 | 2SD669AM-A | 2SB350 | H3950
History: BTNA44A3 | 2SC3124 | 2SD669AM-A | 2SB350 | H3950
Liste
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050