NE68035 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NE68035

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.29 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.035 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10000 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: MICRO-X

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NE68035 datasheet

 9.1. Size:247K  nec
 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf pdf_icon

NE68035

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

 9.2. Size:625K  nec
 ne680series.pdf pdf_icon

NE68035

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- sig

Otros transistores... 2SC5858, 2SC6118LS, MJW18020G, NE68000, NE68018, NE68019, NE68030, NE68033, D882P, NE68039, 2SC5618, 2SC5253, 2SC5855A, H1061, 2SD5703, H945R, H945Q