NE68035 Todos los transistores

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NE68035 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NE68035

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.29 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.035 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 10000 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: MICRO-X

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NE68035 Datasheet (PDF)

5.1. ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Size:247K _nec

NE68035
NE68035

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

5.2. ne680series.pdf Size:625K _nec

NE68035
NE68035

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- signed for low

Otros transistores... 2SC5858 , 2SC6118LS , MJW18020G , NE68000 , NE68018 , NE68019 , NE68030 , NE68033 , S9018 , NE68039 , 2SC5618 , 2SC5253 , 2SC5855A , H1061 , 2SD5703 , H945R , H945Q .

 


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