NE685M13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NEC's NPN SILICON TRANSISTORNE685M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm0.70.05(Bottom View) Low profile / 0.50 mm package height0.5+0.1 0.050.3 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:fT = 12 GHz2 LOW NOISE FIGU

DATA SHEETNEC's NPN SILICON TRANSISTOR NE685M33FEATURES LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGEORDERING INFORMATIONPART NUMBER QUANTITY SUPPLYING FORMNE685M33-A 50 pcs (Non reel) 8 mm wide embossed tapingNE685M33-T3

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE685M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 HIGH GAIN BANDWIDTH PRODUCT:fT =

NPN SILICON TRANSISTOR NE685M03OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M03 NEW M03 PACKAGE:1.20.05 Smallest transistor outline package available Low profile/0.59 mm package height0.80.1 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:2fT = 12 GHz1.4 0.10.45 LOW NOISE FIGURE:(0.9) 0.30.1NF = 1.5 dB