TPT5610 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPT5610
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 350 MHz
Capacitancia de salida (Cc): 38 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92L
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TPT5610 Datasheet (PDF)
tpt5610.pdf

TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20
tpt5609.pdf

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V
tpt5609.pdf

TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: TPCP8601 | BC860AR



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