TPT5610 Datasheet and Replacement
Type Designator: TPT5610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 38 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92L
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TPT5610 Datasheet (PDF)
tpt5610.pdf

TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20
tpt5609.pdf

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V
tpt5609.pdf

TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BC860AW | TP9380 | BCP627A | TP3694 | TP3250 | BD805
Keywords - TPT5610 transistor datasheet
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History: BC860AW | TP9380 | BCP627A | TP3694 | TP3250 | BD805



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