TPT5610 Datasheet and Replacement
Type Designator: TPT5610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 38 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92L
TPT5610 Substitution
TPT5610 Datasheet (PDF)
tpt5610.pdf

TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20
tpt5609.pdf

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V
tpt5609.pdf

TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V
Datasheet: 1129NTV1 , B1129NT1V-1 , CS13001 , CS13002 , CS13003 , T5609 , T5610 , TPT5609 , 2SD882 , 2SC4977 , 2SA1013T , 2SA1015M , 2SA1577W , 2SA1930I , 2SA2050 , 2SA3802 , 2SA562M .
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