2SC1815M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1815M 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: SOT23
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2SC1815M datasheet
..1. Size:887K blue-rocket-elect
2sc1815m.pdf 
2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , h , FE High voltage and high current, excellent hFE linearity ,low noise. / Applications , A
7.4. Size:308K toshiba
2sc1815l.pdf
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit mm Low Noise Amplifier Applications High breakdown voltage, high current capability V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA h (I = 0.1 mA)/h (I = 2 mA)
7.5. Size:368K mcc
2sc1815-bl-gr-o-y.pdf
2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone (818) 701-4933 2SC1815-BL Fax (818) 701-4939 Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Epitaxial
7.6. Size:235K utc
2sc1815.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen
7.7. Size:186K jiangsu
2sc1815.pdf
2S Equivalent Circuit
7.9. Size:1213K htsemi
2sc1815.pdf
2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW
7.10. Size:1131K lge
2sc1815.pdf
2SC1815 Silicon Epitaxial Planar Transistor FEATURES A High voltage and high current SOT-23 Dim Min Max VCEO=50V(Min),IC=150mA(Max). A 2.70 3.10 E Excellent hFE linearity hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50 K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 Typical D 0.4 Typical Low noise. E 0.35 0.48 J D Complementary to 2SA1015. G 1.80 2.00 APPLIC
7.11. Size:544K shenzhen
2sc1815.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base
7.12. Size:853K blue-rocket-elect
2sc1815.pdf
2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , h , , 2SA1015 FE High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications
7.13. Size:138K semtech
2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf
2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.
7.14. Size:945K kexin
2sc1815.pdf
SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Power dissipation +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VE
7.15. Size:122K hfzt
2sc1815lt1.pdf
2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SA1015 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25 * PD 225 mW NO
7.16. Size:774K slkor
2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf
2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D
7.17. Size:521K slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R
7.18. Size:604K mdd
2sc1815.pdf
2SC1815 SOT-23 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBO V Collector to Emitter Voltage 50 V CEO VEBO Emitter to Base Voltage 5 V IC Collector Current
7.19. Size:4258K msksemi
2sc1815-ms.pdf
www.msksemi.com 2SC1815-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE MARKING HF 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBO I Collector Cur
7.20. Size:920K cn yongyutai
2sc1815.pdf
2SC1815 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta
7.21. Size:1732K cn twgmc
2sc1815.pdf
2SC1815 2 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1 BASE 2 EMITTER 3 COLLECTOR MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW T
7.22. Size:2041K cn goodwork
2sc1815.pdf
2SC1815 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 200mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V. Collector current IC=0.15A. ansition frequency fT>80MHz @ Tr IC=1mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde
7.23. Size:1084K cn hottech
2sc1815.pdf
2SC1815 BIPOLAR TRANSISTOR (NPN) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SA1015 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no
7.24. Size:175K inchange semiconductor
2sc1815.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1815 DESCRIPTION High Voltage and High Current Vceo=50V(Min. Ic=150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SA1015(O,Y,GR class) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver sta
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