2SD1710F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1710F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45
W
Tensión colector-base (Vcb): 900
V
Tensión colector-emisor (Vce): 500
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18
MHz
Capacitancia de salida (Cc): 80
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar 2SD1710F
2SD1710F
Datasheet (PDF)
..1. Size:388K blue-rocket-elect
2sd1710f.pdf
2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltagehigh speed switching. / Applications DC-DC Switching regulator applications, High voltage swit
7.1. Size:54K sanyo
2sd1710c.pdf
Ordering number : EN72002SD1710CSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon Transistor2SD1710C500V / 7A Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting.SpecificationsAbsolute Maximum Ratings at Ta=25
7.2. Size:59K wingshing
2sd1710.pdf
Silicon Diffused Power Transistor2SD1710GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflectioncircuites of colour television receiversTO-3PMLQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)
7.3. Size:414K blue-rocket-elect
2sd1710a.pdf
2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltagehigh speed switching. / Applications Use in horizontal deflection circuites of color TV. /
7.4. Size:216K inchange semiconductor
2sd1710.pdf
isc Silicon NPN Power Transistor 2SD1710DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
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