PBSS4140S Todos los transistores

 

PBSS4140S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4140S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.83 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO92
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PBSS4140S Datasheet (PDF)

 ..1. Size:442K  blue-rocket-elect
pbss4140s.pdf pdf_icon

PBSS4140S

PBSS4140S(BR3DG4140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching. / Applications

 6.1. Size:258K  philips
pbss4140t.pdf pdf_icon

PBSS4140S

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4140T40 V, 1A NPN low VCEsat (BISS) transistorProduct data sheet 2005 Feb 24Supersedes data of 2005 Feb 14NXP Semiconductors Product data sheet40 V, 1A PBSS4140TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

 6.2. Size:259K  philips
pbss4140u.pdf pdf_icon

PBSS4140S

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102PBSS4140U40 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

 6.3. Size:342K  philips
pbss4140dpn.pdf pdf_icon

PBSS4140S

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2A847 | 2SD667A-D | 2SC4982 | CSB1086Q | 2SC496R | CSC1398 | 2SC5025

 

 
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