TIP122L Todos los transistores

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage

MCC TM Micro Commercial Components TIP122 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 package Transistors The complementary PNP types

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related s

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B C E Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTER FEATURES 2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASE Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L

Spec. No. HE6712 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

DIP Type Transistors NPN Darlington Transistors TIP122 (KIP122) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP127(3CA127) Features Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

isc Silicon NPN Darlington Power Transistor TIP122 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127 Minimum Lot-to-Lot variations for robust device performance and reliabl

isc Silicon NPN Darlington Power Transistor TIP122FP DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127FP Minimum Lot-to-Lot variations for robust device performance and rel