Биполярный транзистор TIP122L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP122L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 200 pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO126
TIP122L Datasheet (PDF)
tip122l.pdf
TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E
tip120 tip121 tip122 tip125 tip126 tip127 .pdf
TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32TI
tip120 tip121 tip122 tip125 tip126 tip127.pdf
TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32T
tip122fp tip127fp.pdf
TIP122FPTIP127FPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGDESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPNpower transistor in monolithic Darlingtonconfiguration mounted in Jedec TO-220FP fully32molded isolated package. It is intented for use in1pow
tip120 tip121 tip122 tip125 tip126 tip127 .pdf
TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement
tip122fp tip127fp .pdf
TIP122FPTIP127FPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)DESCRIPTIONThe TIP122FP is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration Jedec TO-220FP fully moldedisolated package, intented for use in power linear32and switching a
tip122.pdf
TIP120/121/122Medium Power Linear Switching Applications Complementary to TIP125/126/127TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value UnitsVCBO Collector-Base Voltage : TIP120 60 V : TIP121 80 VB : TIP122 100 VVCEO Collector-Emitter Voltage :
tip122.pdf
MCCTM Micro Commercial ComponentsTIP12220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 packageTransistors The complementary PNP types
tip122.pdf
UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTORNPN EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP122 is a NPN epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65
tip120 tip121 tip122.pdf
IMPORTANT NOTICETexas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.TI warrants performance of its semiconductor products and related s
tip122f 127f.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FPBCEDesigned for General-Purpose Amplifier and Low-Speed Switching Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage V
tip122 tip127.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTERFEATURES2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d
tip120 tip121 tip122 tip125 tip126 tip127.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1
tip122.pdf
SEMICONDUCTOR TIP122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=100V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50L
htip122.pdf
Spec. No. : HE6712HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP122 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper
tip122 tip127.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
sttip122.pdf
ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit100 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 5 VEmitter Base Voltage VEBO 5 ACollector Current IC 8 ACollector Current (Pulse) ICP 0.12 ABase Current IB
tip122-tip127 to220.pdf
TIP120,121,122SEMICONDUCTORTECHNICAL DATATIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN)TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURESMedium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol
tip122.pdf
DIP Type TransistorsNPN Darlington TransistorsTIP122 (KIP122)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0
tip122 3da122.pdf
TIP122(3DA122) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP127(3CA127) Features: Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I
tip122.pdf
isc Silicon NPN Darlington Power Transistor TIP122DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127Minimum Lot-to-Lot variations for robust deviceperformance and reliabl
tip122fp.pdf
isc Silicon NPN Darlington Power Transistor TIP122FPDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP127FPMinimum Lot-to-Lot variations for robust deviceperformance and rel
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050