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TIP127L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP127L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar TIP127L

 

TIP127L Datasheet (PDF)

 ..1. Size:378K  blue-rocket-elect
tip127l.pdf

TIP127L
TIP127L

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E

 8.1. Size:39K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP127L
TIP127L

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32TI

 8.2. Size:69K  st
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP127L
TIP127L

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration Jedec TO-220plastic package, intented for use in power linearand switching applications.The complementary PNP types are TIP125,32T

 8.3. Size:270K  st
tip122fp tip127fp.pdf

TIP127L
TIP127L

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGDESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPNpower transistor in monolithic Darlingtonconfiguration mounted in Jedec TO-220FP fully32molded isolated package. It is intented for use in1pow

 8.4. Size:53K  st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP127L
TIP127L

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement

 8.5. Size:29K  st
tip122fp tip127fp .pdf

TIP127L
TIP127L

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)DESCRIPTIONThe TIP122FP is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration Jedec TO-220FP fully moldedisolated package, intented for use in power linear32and switching a

 8.6. Size:219K  mcc
tip125 tip126 tip127.pdf

TIP127L
TIP127L

MCCMicro Commercial ComponentsTMTIP125/126/12720736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesSilicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy mee

 8.7. Size:21K  utc
tip127.pdf

TIP127L
TIP127L

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTORPNP EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP127 is a PNP epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65

 8.8. Size:1163K  jiangsu
tip127f.pdf

TIP127L
TIP127L

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASETIP127F DARLINGTON TRANSISTOR (PNP)2.COLLECTOR3.EMITTERFEATURES 1 2 3CPNP BMedium Power Complementary Silicon Transistors R 1R 2E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm

 8.9. Size:527K  jiangsu
tip122 tip127.pdf

TIP127L
TIP127L

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTERFEATURES2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

 8.10. Size:2979K  jiangsu
tip120 tip121 tip122 tip125 tip126 tip127.pdf

TIP127L
TIP127L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

 8.11. Size:70K  kec
tip127.pdf

TIP127L
TIP127L

SEMICONDUCTOR TIP127TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50

 8.12. Size:231K  lge
tip120 tip127.pdf

TIP127L
TIP127L

TIP120-TIP127 TO-220 Darlington Transistor TO-2201.BASE 2.COLLECTOR3.EMITTER 3 21FeaturesTIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

 8.13. Size:50K  hsmc
htip127.pdf

TIP127L
TIP127L

Spec. No. : HE6713HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP127PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP127 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

 8.14. Size:671K  jilin sino
tip122 tip127.pdf

TIP127L
TIP127L

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 8.15. Size:102K  first silicon
tip122-tip127 to220.pdf

TIP127L
TIP127L

TIP120,121,122SEMICONDUCTORTECHNICAL DATATIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN)TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURESMedium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

 8.16. Size:689K  kexin
tip127.pdf

TIP127L

DIP Type TransistorsPNP Darlington TransistorsTIP127 (KIP127)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54

 8.17. Size:260K  lzg
tip127f 3ca127f.pdf

TIP127L
TIP127L

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

 8.18. Size:212K  lzg
tip127 3ca127.pdf

TIP127L
TIP127L

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

 8.19. Size:213K  inchange semiconductor
tip127.pdf

TIP127L
TIP127L

isc Silicon PNP Darlington Power Transistor TIP127DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122Minimum Lot-to-Lot variations for robust deviceperformance and r

 8.20. Size:229K  inchange semiconductor
tip127b.pdf

TIP127L
TIP127L

isc Silicon PNP Darlington Power Transistor TIP127BDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122BMinimum Lot-to-Lot variations for robust deviceperformance and

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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