TIP127L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP127L 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 1000
Encapsulados: TO126
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TIP127L datasheet
..1. Size:378K blue-rocket-elect
tip127l.pdf 
TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E
8.1. Size:270K st
tip122fp tip127fp.pdf
TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow
8.2. Size:53K st
tip120 tip121 tip122 tip125 tip126 tip127 .pdf
TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement
8.3. Size:219K mcc
tip125 tip126 tip127.pdf
MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy mee
8.4. Size:21K utc
tip127.pdf
UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65
8.5. Size:1163K jiangsu
tip127f.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASE TIP127F DARLINGTON TRANSISTOR (PNP) 2.COLLECTOR 3.EMITTER FEATURES 1 2 3 C PNP B Medium Power Complementary Silicon Transistors R 1 R 2 E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm
8.6. Size:527K jiangsu
tip122 tip127.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTER FEATURES 2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d
8.7. Size:2979K jiangsu
tip120 tip121 tip122 tip125 tip126 tip127.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASE Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1
8.8. Size:70K kec
tip127.pdf
SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50
8.9. Size:231K lge
tip120 tip127.pdf
TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1
8.10. Size:50K hsmc
htip127.pdf
Spec. No. HE6713 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper
8.11. Size:671K jilin sino
tip122 tip127.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
8.12. Size:102K first silicon
tip122-tip127 to220.pdf
TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol
8.13. Size:689K kexin
tip127.pdf
DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54
8.14. Size:260K lzg
tip127f 3ca127f.pdf
TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122F(3DA122F) Features Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V
8.15. Size:212K lzg
tip127 3ca127.pdf
TIP127(3CA127) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122(3DA122) Features Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO
8.16. Size:213K inchange semiconductor
tip127.pdf
isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122 Minimum Lot-to-Lot variations for robust device performance and r
8.17. Size:229K inchange semiconductor
tip127b.pdf
isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122B Minimum Lot-to-Lot variations for robust device performance and
Otros transistores... PH2369M, S8050A, S8050M, S8050W, S8550A, S8550M, S8550W, TIP122L, BC557, TIP41P, TIP42P, TT2190, DTC124ETA, DTC144ETA, RN1002, RN1201, RN1204
