TIP127L Datasheet and Replacement

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E

TIP122FPTIP127FPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGDESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPNpower transistor in monolithic Darlingtonconfiguration mounted in Jedec TO-220FP fully32molded isolated package. It is intented for use in1pow

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement

MCCMicro Commercial ComponentsTMTIP125/126/12720736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesSilicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy mee

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTORPNP EPITAXIAL TRANSISTORDESCRIPTIONThe UTC TIP127 is a PNP epitaxial transistor, designedfor use in general purpose amplifier low-speed switchingapplications.BCETO-220ABSOLUTE MAXIMUM RATINGS (Ta=25C)PARAMETER SYMBOL VALUE UNITStorage Temperature Ts -55 ~ +150 CJunction Temperature Tj 150 CTotal Power Dissipation PD 65

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASETIP127F DARLINGTON TRANSISTOR (PNP)2.COLLECTOR3.EMITTERFEATURES 1 2 3CPNP BMedium Power Complementary Silicon Transistors R 1R 2E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTERFEATURES2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

SEMICONDUCTOR TIP127TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER ARAPPLICATIONS.S FEATURES PD High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERSA 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.)B 15.30 MAXC 0.80_+D 3.60 0.20TE 3.00F 6.70 MAX_G 13.60 + 0.50

TIP120-TIP127 TO-220 Darlington Transistor TO-2201.BASE 2.COLLECTOR3.EMITTER 3 21FeaturesTIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

Spec. No. : HE6713HI-SINCERITYIssued Date : 1993.01.13Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP127PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP127 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temper

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

TIP120,121,122SEMICONDUCTORTECHNICAL DATATIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN)TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURESMedium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

DIP Type TransistorsPNP Darlington TransistorsTIP127 (KIP127)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

isc Silicon PNP Darlington Power Transistor TIP127DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122Minimum Lot-to-Lot variations for robust deviceperformance and r

isc Silicon PNP Darlington Power Transistor TIP127BDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -4.0V(Max)@ I = -5ACComplement to Type TIP122BMinimum Lot-to-Lot variations for robust deviceperformance and