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ST2SA1213U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SA1213U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT89
 

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ST2SA1213U Datasheet (PDF)

 ..1. Size:688K  semtech
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ST2SA1213U

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

 8.1. Size:564K  semtech
st2sa1663u.pdf pdf_icon

ST2SA1213U

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 8.2. Size:583K  semtech
st2sa1012.pdf pdf_icon

ST2SA1213U

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollec

 8.3. Size:625K  semtech
st2sa1661u.pdf pdf_icon

ST2SA1213U

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

Otros transistores... RN2002 , BCX53U , BCX56U , ST13002T , ST13003 , ST13003H , ST13003T , ST2SA1012 , B772 , ST2SA1661U , ST2SA1663U , ST2SA1666U , ST2SA1900U , ST2SA2060U , ST2SA2071U , ST2SA683 , ST2SA684 .

History: 2N331

 

 
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