ST2SB596 Todos los transistores

 

ST2SB596 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SB596
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 130 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
 

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ST2SB596 Datasheet (PDF)

 ..1. Size:527K  semtech
st2sb596.pdf pdf_icon

ST2SB596

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 4 ACollector Current -IC 0.4 ABase Current -IB OPower Dissipation (Tc = 25 C) PC 30 WOJu

 9.1. Size:709K  semtech
st2sb772r.pdf pdf_icon

ST2SB596

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati

 9.2. Size:577K  semtech
st2sb1386u.pdf pdf_icon

ST2SB596

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 20 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation2 2) Junction Tempera

 9.3. Size:349K  semtech
st2sb1151t.pdf pdf_icon

ST2SB596

ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a

Otros transistores... ST2SA683 , ST2SA684 , ST2SB1124U , ST2SB1132U , ST2SB1151T , ST2SB1188U , ST2SB1386U , ST2SB1561U , C3198 , ST2SB772R , ST2SB772T , ST2SB772U , ST2SB9435U , ST2SC1383 , ST2SC1384 , ST2SC2073U , ST2SC4073U .

History: BD130 | CK65B | BD897 | 2SC3552O | CK64A | ECG2345 | TIP137

 

 
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