ST2SB9435U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2SB9435U
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.72 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 110 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 110
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de ST2SB9435U
ST2SB9435U Datasheet (PDF)
st2sb9435u.pdf

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 45 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 APeak Collector Current -ICM 5 ABase Current -IB 1 A1)Total Power Dissipation at Ta = 25 Ptot 0.72 WTotal Power Dissipation at Tc =
st2sb772r.pdf

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati
st2sb1386u.pdf

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 20 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation2 2) Junction Tempera
st2sb1151t.pdf

ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a
Otros transistores... ST2SB1151T , ST2SB1188U , ST2SB1386U , ST2SB1561U , ST2SB596 , ST2SB772R , ST2SB772T , ST2SB772U , 2SD313 , ST2SC1383 , ST2SC1384 , ST2SC2073U , ST2SC4073U , ST2SC4375U , ST2SC4378U , ST2SC4379U , ST2SC4541U .
History: LDTD143TKT1G | H1302 | 2SA1556 | 2SD599 | 3CG9012
History: LDTD143TKT1G | H1302 | 2SA1556 | 2SD599 | 3CG9012



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n4401 | bc547 transistor | bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor