ST2SB9435U Todos los transistores

 

ST2SB9435U Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SB9435U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.72 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 110 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: SOT89
 

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ST2SB9435U datasheet

 ..1. Size:555K  semtech
st2sb9435u.pdf pdf_icon

ST2SB9435U

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 45 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Peak Collector Current -ICM 5 A Base Current -IB 1 A 1) Total Power Dissipation at Ta = 25 Ptot 0.72 W Total Power Dissipation at Tc =

 9.1. Size:709K  semtech
st2sb772r.pdf pdf_icon

ST2SB9435U

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati

 9.2. Size:577K  semtech
st2sb1386u.pdf pdf_icon

ST2SB9435U

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera

 9.3. Size:349K  semtech
st2sb1151t.pdf pdf_icon

ST2SB9435U

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a

Otros transistores... ST2SB1151T , ST2SB1188U , ST2SB1386U , ST2SB1561U , ST2SB596 , ST2SB772R , ST2SB772T , ST2SB772U , A1013 , ST2SC1383 , ST2SC1384 , ST2SC2073U , ST2SC4073U , ST2SC4375U , ST2SC4378U , ST2SC4379U , ST2SC4541U .

 

 

 


 
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