ST2SB9435U Specs and Replacement
Type Designator: ST2SB9435U
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.72 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT89
- BJT ⓘ Cross-Reference Search
ST2SB9435U datasheet
..1. Size:555K semtech
st2sb9435u.pdf 

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 45 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Peak Collector Current -ICM 5 A Base Current -IB 1 A 1) Total Power Dissipation at Ta = 25 Ptot 0.72 W Total Power Dissipation at Tc =... See More ⇒
9.1. Size:709K semtech
st2sb772r.pdf 

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati... See More ⇒
9.2. Size:577K semtech
st2sb1386u.pdf 

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera... See More ⇒
9.3. Size:349K semtech
st2sb1151t.pdf 

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a... See More ⇒
9.4. Size:527K semtech
st2sb596.pdf 

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 4 A Collector Current -IC 0.4 A Base Current -IB O Power Dissipation (Tc = 25 C) PC 30 W O Ju... See More ⇒
9.5. Size:553K semtech
st2sb1561u.pdf 

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T... See More ⇒
9.6. Size:558K semtech
st2sb1188u.pdf 

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper... See More ⇒
9.7. Size:539K semtech
st2sb1132u.pdf 

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Stora... See More ⇒
9.8. Size:668K semtech
st2sb772t.pdf 

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current... See More ⇒
9.9. Size:862K semtech
st2sb1124u.pdf 

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperatu... See More ⇒
9.10. Size:431K semtech
st2sb772u.pdf 

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Curre... See More ⇒
Detailed specifications: ST2SB1151T
, ST2SB1188U
, ST2SB1386U
, ST2SB1561U
, ST2SB596
, ST2SB772R
, ST2SB772T
, ST2SB772U
, A1013
, ST2SC1383
, ST2SC1384
, ST2SC2073U
, ST2SC4073U
, ST2SC4375U
, ST2SC4378U
, ST2SC4379U
, ST2SC4541U
.
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