ST2SC1384 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2SC1384
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
ST2SC1384 Datasheet (PDF)
st2sc1383 st2sc1384.pdf

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCo
gst2sc1383.pdf

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current : 1.0A Lead(Pb)-FreePackages & Pin Assignments TO-92MOD Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma
st2sc4073u.pdf

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T
st2sc4379u.pdf

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 3DG2413K | BC848CW-G | 2SA1706T-AN | 2SA795A | RT3YB7M | 2SA815
History: 3DG2413K | BC848CW-G | 2SA1706T-AN | 2SA795A | RT3YB7M | 2SA815



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904