ST2SC1384 Todos los transistores

 ..1. Size:514K  semtech
 st2sc1383 st2sc1384.pdf

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Co

 6.1. Size:371K  globaltech semi
 gst2sc1383.pdf

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current 1.0A Lead(Pb)-Free Packages & Pin Assignments TO-92MOD Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

 9.1. Size:647K  semtech
 st2sc4073u.pdf

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T

 9.2. Size:671K  semtech
 st2sc4379u.pdf

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 0.4 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150

 9.3. Size:632K  semtech
 st2sc2073u.pdf

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W To

 9.4. Size:634K  semtech
 st2sc4378u.pdf

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 2 A 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg

 9.5. Size:539K  semtech
 st2sc4672u.pdf

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ

 9.6. Size:638K  semtech
 st2sc4541u.pdf

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 A Base 0.5 Ptot W Total Power Dissipation 1 1) Junction Te

 9.7. Size:563K  semtech
 st2sc4375u.pdf

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A 0.5 Ptot W Total Power Dissipation 11) Junction Temperature TJ 150 Storage Temperature Range TStg -

 9.8. Size:195K  globaltech semi
 gst2sc3838.pdf

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 11V amplifier and switch. Collector Current 50mA Lead(Pb)-Free Packages & Pin Assignments GST2SC3838F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

 9.9. Size:473K  globaltech semi
 gst2sc3356.pdf

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-Free Packages & Pin Assignments GST2SC3356F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Informati