ST2SD1163A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2SD1163A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 350
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar ST2SD1163A
ST2SD1163A
Datasheet (PDF)
..1. Size:476K semtech
st2sd1163a.pdf
ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO 150 VCollector Emitter Voltage VCEO 6 VEmitter Base Voltage VEBO 7 ACollector Current IC 10 ACollector Peak Current ICP 20 ACollector Surge
8.1. Size:551K semtech
st2sd1760u.pdf
ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Stor
8.2. Size:560K semtech
st2sd1664u.pdf
ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te
8.3. Size:350K semtech
st2sd1691t.pdf
ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter
8.4. Size:391K semtech
st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf
ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te
8.5. Size:531K semtech
st2sd1766u.pdf
ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 APeak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A0.5 Collector Power Dissipation PC W 2 1) Junction T
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