ST2SD1163A Todos los transistores

 

ST2SD1163A Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SD1163A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de ST2SD1163A

   - Selección ⓘ de transistores por parámetros

 

ST2SD1163A datasheet

 ..1. Size:476K  semtech
st2sd1163a.pdf pdf_icon

ST2SD1163A

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge

 8.1. Size:551K  semtech
st2sd1760u.pdf pdf_icon

ST2SD1163A

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

 8.2. Size:560K  semtech
st2sd1664u.pdf pdf_icon

ST2SD1163A

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.3. Size:350K  semtech
st2sd1691t.pdf pdf_icon

ST2SD1163A

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

Otros transistores... ST2SC1384 , ST2SC2073U , ST2SC4073U , ST2SC4375U , ST2SC4378U , ST2SC4379U , ST2SC4541U , ST2SC4672U , NJW0281G , ST2SD1664U , ST2SD1691T , ST2SD1760U , ST2SD1766U , ST2SD2150U , ST2SD2391U , ST2SD526 , ST2SD874U .

 

 

 


 
↑ Back to Top
.