ST2SD1760U Todos los transistores

 

ST2SD1760U Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SD1760U
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT89
 

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ST2SD1760U datasheet

 ..1. Size:551K  semtech
st2sd1760u.pdf pdf_icon

ST2SD1760U

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

 6.1. Size:531K  semtech
st2sd1766u.pdf pdf_icon

ST2SD1760U

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

 8.1. Size:560K  semtech
st2sd1664u.pdf pdf_icon

ST2SD1760U

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.2. Size:350K  semtech
st2sd1691t.pdf pdf_icon

ST2SD1760U

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

Otros transistores... ST2SC4375U , ST2SC4378U , ST2SC4379U , ST2SC4541U , ST2SC4672U , ST2SD1163A , ST2SD1664U , ST2SD1691T , TIP2955 , ST2SD1766U , ST2SD2150U , ST2SD2391U , ST2SD526 , ST2SD874U , ST2SD882HT , ST2SD882T , ST2SD882U .

History: A608

 

 

 


 
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