ST2SD1766U Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2SD1766U

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 82

Encapsulados: SOT89

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ST2SD1766U datasheet

 ..1. Size:531K  semtech
 st2sd1766u.pdf pdf_icon

ST2SD1766U

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

 6.1. Size:551K  semtech
 st2sd1760u.pdf pdf_icon

ST2SD1766U

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

 8.1. Size:560K  semtech
 st2sd1664u.pdf pdf_icon

ST2SD1766U

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te

 8.2. Size:350K  semtech
 st2sd1691t.pdf pdf_icon

ST2SD1766U

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

MOSTRAR MÁS

Otros transistores... ST2SC4378U, ST2SC4379U, ST2SC4541U, ST2SC4672U, ST2SD1163A, ST2SD1664U, ST2SD1691T, ST2SD1760U, BC549, ST2SD2150U, ST2SD2391U, ST2SD526, ST2SD874U, ST2SD882HT, ST2SD882T, ST2SD882U, ST2SD882U-P