ST2SD1766U Specs and Replacement

Type Designator: ST2SD1766U

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SOT89

 ST2SD1766U Substitution

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ST2SD1766U datasheet

 ..1. Size:531K  semtech

st2sd1766u.pdf pdf_icon

ST2SD1766U

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T... See More ⇒

 6.1. Size:551K  semtech

st2sd1760u.pdf pdf_icon

ST2SD1766U

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor... See More ⇒

 8.1. Size:560K  semtech

st2sd1664u.pdf pdf_icon

ST2SD1766U

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te... See More ⇒

 8.2. Size:350K  semtech

st2sd1691t.pdf pdf_icon

ST2SD1766U

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter ... See More ⇒

Detailed specifications: ST2SC4378U, ST2SC4379U, ST2SC4541U, ST2SC4672U, ST2SD1163A, ST2SD1664U, ST2SD1691T, ST2SD1760U, BC549, ST2SD2150U, ST2SD2391U, ST2SD526, ST2SD874U, ST2SD882HT, ST2SD882T, ST2SD882U, ST2SD882U-P

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