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STTIP32C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STTIP32C
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar STTIP32C

 

STTIP32C Datasheet (PDF)

 ..1. Size:515K  semtech
 sttip32c.pdf pdf_icon

STTIP32C

ST TIP32C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage -VCBO 100 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 3 A Collector Current -IC 5 A Collector Current (Pulse) -ICP 1 A Base Current -

 8.1. Size:530K  semtech
 sttip31c.pdf pdf_icon

STTIP32C

ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 1 A O Power Diss

 9.1. Size:480K  semtech
 sttip42c.pdf pdf_icon

STTIP32C

ST TIP42C PNP Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage -VCBO 100 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 6 A Collector Current -IC 10 A Collector Current (Pulse) -ICP 2 A Base Current

 9.2. Size:515K  semtech
 sttip122.pdf pdf_icon

STTIP32C

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB

MOSTRAR MÁS

Otros transistores... STBD910 , STBD911 , STBD912 , STBDW42 , STBDW47 , STH1061 , STTIP122 , STTIP31C , BC547 , STTIP42C , FJAF6806D , FJAF6808D , FJAF6810 , FJAF6810D , FJAF6812 , FJAF6815 , FJAF6820 .

History: 2SD2248 | 2SD1990 | RN1601 | 2SC3750N | 2SC4135 | TI430 | DDTA143XKA

 

 
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