L2SA1365FLT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SA1365FLT1G
Código: AF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
SOT23
- Selección de transistores por parámetros
L2SA1365FLT1G
Datasheet (PDF)
..1. Size:1081K lrc
l2sa1365flt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package
9.1. Size:165K lrc
l2sa1036kplt1g.pdf 

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
9.2. Size:141K lrc
l2sa1576aqt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A
9.3. Size:141K lrc
l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157
9.4. Size:167K lrc
l2sa1036kqlt1g l2sa1036krlt1g.pdf 

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
9.5. Size:143K lrc
l2sa1037akslt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeatures We declare that the material of product compliance with RoHS requirements.L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pac
9.6. Size:192K lrc
l2sa1577qt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements.L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q
9.8. Size:142K lrc
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
9.9. Size:167K lrc
l2sa1036krlt1g.pdf 

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
9.10. Size:141K lrc
l2sa1576art1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157
9.11. Size:192K lrc
l2sa1577pt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G SeriesF S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577
9.12. Size:142K lrc
l2sa1037akqlt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
9.13. Size:967K lrc
l2sa1235flt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.
9.16. Size:134K lrc
l2sa1576ast1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576
9.17. Size:142K lrc
l2sa1037akqlt1g l2sa1037akqlt3g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
9.19. Size:192K lrc
l2sa1577rt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL2SA1577QT1G SeriesF We declare that the material of product compliance with RoHS requirements.S-L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q
9.20. Size:142K lrc
l2sa1037akrlt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack
9.21. Size:165K lrc
l2sa1036kqlt1g.pdf 

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a
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History: 2N1073B
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