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L2SA1365FLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SA1365FLT1G
   Código: AF
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23
 

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L2SA1365FLT1G Datasheet (PDF)

 ..1. Size:1081K  lrc
l2sa1365flt1g.pdf pdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package

 9.1. Size:165K  lrc
l2sa1036kplt1g.pdf pdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 9.2. Size:141K  lrc
l2sa1576aqt1g.pdf pdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A

 9.3. Size:141K  lrc
l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdf pdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

Otros transistores... KT867A , KT896A , KT896B , L2SA1036KQLT1G , L2SA1036KRLT1G , L2SA1037AKQLT1G , L2SA1037AKRLT1G , L2SA1037AKSLT1G , 2SD1047 , L2SA1576AQT1G , L2SA1576ART1G , L2SA1576AST1G , L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G .

 

 
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