L2SA1365FLT1G datasheet, аналоги, основные параметры

Наименование производителя: L2SA1365FLT1G  📄📄 

Маркировка: AF

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V

Макcимальный постоянный ток коллектора (Ic): 0.7 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 180 MHz

Статический коэффициент передачи тока (hFE): 150

Корпус транзистора: SOT23

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L2SA1365FLT1G даташит

 ..1. Size:1081K  lrc
l2sa1365flt1g.pdfpdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini package silicon PNP epitaxial transistor, L2SA1365*LT1G designed with high collector current and small VCE(sat). . S-L2SA1365*LT1G FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3 Excellent linearity of DC forward current gain. Super mini package

 9.1. Size:165K  lrc
l2sa1036kplt1g.pdfpdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

 9.2. Size:141K  lrc
l2sa1576aqt1g.pdfpdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576A

 9.3. Size:141K  lrc
l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdfpdf_icon

L2SA1365FLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

Другие транзисторы: KT867A, KT896A, KT896B, L2SA1036KQLT1G, L2SA1036KRLT1G, L2SA1037AKQLT1G, L2SA1037AKRLT1G, L2SA1037AKSLT1G, 2N2222A, L2SA1576AQT1G, L2SA1576ART1G, L2SA1576AST1G, L2SA1774QT1G, L2SA1774RT1G, L2SA1774ST1G, L2SA2029QM3T5G, L2SA2029RM3T5G