L2SA2029QM3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SA2029QM3T5G

Código: FQ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.265 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT723

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L2SA2029QM3T5G datasheet

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 l2sa2029qm3t5g.pdf pdf_icon

L2SA2029QM3T5G

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 l2sa2029rm3t5g.pdf pdf_icon

L2SA2029QM3T5G

 8.1. Size:125K  lrc
 s-l2sa2030m3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

 8.2. Size:125K  lrc
 l2sa2030m3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

MOSTRAR MÁS

Otros transistores... L2SA1037AKSLT1G, L2SA1365FLT1G, L2SA1576AQT1G, L2SA1576ART1G, L2SA1576AST1G, L2SA1774QT1G, L2SA1774RT1G, L2SA1774ST1G, A733, L2SA2029RM3T5G, L2SA812QLT1G, L2SA812RLT1G, L2SA812SLT1G, L2SB1197KQLT1G, L2SB1197KRLT1G, L2SB772P, L2SB772Q