L2SA2029QM3T5G - аналоги и даташиты биполярного транзистора

 

L2SA2029QM3T5G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: L2SA2029QM3T5G
   Маркировка: FQ
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.265 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 3.5 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT723
 

 Аналоги (замена) для L2SA2029QM3T5G

   - подбор ⓘ биполярного транзистора по параметрам

 

L2SA2029QM3T5G Datasheet (PDF)

 ..1. Size:290K  lrc
 l2sa2029qm3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

 6.1. Size:157K  lrc
 l2sa2029rm3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

 8.1. Size:125K  lrc
 s-l2sa2030m3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

 8.2. Size:125K  lrc
 l2sa2030m3t5g.pdf pdf_icon

L2SA2029QM3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... L2SA1037AKSLT1G , L2SA1365FLT1G , L2SA1576AQT1G , L2SA1576ART1G , L2SA1576AST1G , L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , TIP31C , L2SA2029RM3T5G , L2SA812QLT1G , L2SA812RLT1G , L2SA812SLT1G , L2SB1197KQLT1G , L2SB1197KRLT1G , L2SB772P , L2SB772Q .

History: L2SA1576AQT1G

 

 
Back to Top

 


 
.