L2SA812RLT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SA812RLT1G
Código: M6
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar L2SA812RLT1G
L2SA812RLT1G
Datasheet (PDF)
..1. Size:193K lrc
l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
..2. Size:193K lrc
l2sa812rlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
..3. Size:193K lrc
l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu
7.1. Size:191K lrc
l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsFEATURE L2SA812QLT1G Series High Voltage: VCEO = -50 V.S-L2SA812QLT1G Series Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi
7.2. Size:187K lrc
l2sa812qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SA812QLT1G SeriesFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie
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