L2SA812RLT1G Specs and Replacement
Type Designator: L2SA812RLT1G
SMD Transistor Code: M6
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT23
L2SA812RLT1G Substitution
- BJT ⓘ Cross-Reference Search
L2SA812RLT1G datasheet
l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf 
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi... See More ⇒
Detailed specifications: L2SA1576ART1G , L2SA1576AST1G , L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , L2SA812QLT1G , MJE340 , L2SA812SLT1G , L2SB1197KQLT1G , L2SB1197KRLT1G , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G , L2SC1623SLT1G .
History: 2SA1734 | 3DK104E | PUMX1
Keywords - L2SA812RLT1G pdf specs
L2SA812RLT1G cross reference
L2SA812RLT1G equivalent finder
L2SA812RLT1G pdf lookup
L2SA812RLT1G substitution
L2SA812RLT1G replacement
