2N6481 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6481 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 117 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: X21
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2N6481 datasheet
9.1. Size:151K motorola
2n6487 2n6488 2n6490 2n6491.pdf 
Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Plastic Power Transistors * 2N6488 PNP . . . designed for use in general purpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490 hFE = 20 150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc 2N6491* Collector Emitter Sustaining
9.2. Size:52K st
2n6487 2n6488 2n6490.pdf
2N6487 2N6488/2N6490 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low 3 2 frequency switching applications. 1 The 2N6487 complementary type is 2N6490.
9.5. Size:234K onsemi
2n6487 2n6488 2n6490 2n6491.pdf
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and www.onsemi.com switching applications. Features 15 AMPERE High DC Current Gain COMPLEMENTARY SILICON High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package 60-80 VOLTS, 75 WATTS These
9.7. Size:267K cdil
2n6486-9 2n6490-1.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3
9.8. Size:94K jmnic
2n6488.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6488 DESCRIPTION With TO-220 package Complement to type 2N6491 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m
9.9. Size:94K jmnic
2n6487.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6487 DESCRIPTION With TO-220 package Complement to type 2N6490 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m
9.10. Size:155K jmnic
2n6489 2n6490 2n6491.pdf
JMnic Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outli
9.11. Size:155K jmnic
2n6486.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6486 2N6487 2N6488 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi
9.12. Size:171K cn sptech
2n6488.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N6488 DESCRIPTION DC Current Gain Specified to 15 Amperes- h =20-150@ I = 5.0A FE C =5.0(Min)@ I =15A C Collector-Emitter Sustaining Voltage- V =80Vdc(Min) CEO(SUS) Complement to Type 2N6491 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T
9.13. Size:195K inchange semiconductor
2n6488.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6488 DESCRIPTION DC Current Gain Specified to 15 Amperes- h =20-150@ I = 5.0A FE C =5.0(Min)@ I =15A C Collector-Emitter Sustaining Voltage- V =80Vdc(Min) CEO(SUS) Complement to Type 2N6491 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
9.14. Size:121K inchange semiconductor
2n6486 2n6487 2n6488.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6486 2N6487 2N6488 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitte
9.15. Size:121K inchange semiconductor
2n6489 2n6490 2n6491.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1
Otros transistores... 2N6474, 2N6475, 2N6476, 2N6477, 2N6478, 2N6478A, 2N6479, 2N6480, D209L, 2N6482, 2N6486, 2N6487, 2N6488, 2N6489, 2N649, 2N6490, 2N6491
