All Transistors. 2N6481 Datasheet

 

2N6481 Datasheet and Replacement


   Type Designator: 2N6481
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: X21
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2N6481 Datasheet (PDF)

 9.1. Size:151K  motorola
2n6487 2n6488 2n6490 2n6491.pdf pdf_icon

2N6481

Order this documentMOTOROLAby 2N6487/DSEMICONDUCTOR TECHNICAL DATANPN2N6487Complementary Silicon PlasticPower Transistors*2N6488PNP. . . designed for use in generalpurpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490hFE = 20150 @ IC = 5.0 AdchFE = 5.0 (Min) @ IC = 15 Adc2N6491* CollectorEmitter Sustaining

 9.2. Size:52K  st
2n6487 2n6488 2n6490.pdf pdf_icon

2N6481

2N64872N6488/2N6490COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are siliconepitaxial-base NPN transistors in Jedec TO-220plastic package.They are inteded for use in power linear and low32frequency switching applications.1The 2N6487 complementary type is 2N6490.

 9.3. Size:75K  njs
2n6483.pdf pdf_icon

2N6481

 9.4. Size:66K  central
2n6486 2n6487 2n6488 2n6489 2n6490 2n6491.pdf pdf_icon

2N6481

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2N5960

Keywords - 2N6481 transistor datasheet

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