LBC807-25WT1G Todos los transistores

 

LBC807-25WT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC807-25WT1G

Código: 5B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: SC70

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LBC807-25WT1G datasheet

 ..1. Size:78K  lrc
lbc807-25wt1g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-25WT1G S-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement LBC807 Series. 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 ..2. Size:78K  lrc
lbc807-25wt1g lbc807-25wt3g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-25WT1G S-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement LBC807 Series. 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 5.1. Size:254K  lrc
lbc807-25lt1g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G PNP Silicon LBC807-40LT1G FEATURE S-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-25LT1G General purpose switching and amplification. S-LBC807-40LT1G PNP complement LBC807 Series. We declare that the material of product complia

 5.2. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN

Otros transistores... L9014SLT1G , L9014TLT1G , L9015QLT1G , L9015RLT1G , L9015SLT1G , LBC807-16LT1G , LBC807-16WT1G , LBC807-25LT1G , C1815 , LBC807-40LT1G , LBC807-40WT1G , LBC817-16LT1G , LBC817-16WT1G , LBC817-25DPMT1G , LBC817-25LT1G , LBC817-25WT1G , LBC817-40LT1G .

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