All Transistors. LBC807-25WT1G Datasheet

 

LBC807-25WT1G Datasheet and Replacement


   Type Designator: LBC807-25WT1G
   SMD Transistor Code: 5B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SC70
 

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LBC807-25WT1G Datasheet (PDF)

 ..1. Size:78K  lrc
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LBC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 ..2. Size:78K  lrc
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LBC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

 5.1. Size:254K  lrc
lbc807-25lt1g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia

 5.2. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf pdf_icon

LBC807-25WT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN

Datasheet: L9014SLT1G , L9014TLT1G , L9015QLT1G , L9015RLT1G , L9015SLT1G , LBC807-16LT1G , LBC807-16WT1G , LBC807-25LT1G , 2N2222 , LBC807-40LT1G , LBC807-40WT1G , LBC817-16LT1G , LBC817-16WT1G , LBC817-25DPMT1G , LBC817-25LT1G , LBC817-25WT1G , LBC817-40LT1G .

History: DDTA114YCA | 2SC830H | 2SD1355Y | CR13003 | STD2805 | DTC114TET1G | KT602G

Keywords - LBC807-25WT1G transistor datasheet

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