LBC807-40WT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC807-40WT1G
Código: YL
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 250
Encapsulados: SC70
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LBC807-40WT1G datasheet
lbc807-40wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-
lbc807-40wt1g lbc807-40wt3g.pdf
LBC807-40WT1G S-LBC807-40WT1G PNP Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
lbc807-40dmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC807-40DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN
Otros transistores... L9015QLT1G , L9015RLT1G , L9015SLT1G , LBC807-16LT1G , LBC807-16WT1G , LBC807-25LT1G , LBC807-25WT1G , LBC807-40LT1G , 2N3055 , LBC817-16LT1G , LBC817-16WT1G , LBC817-25DPMT1G , LBC817-25LT1G , LBC817-25WT1G , LBC817-40LT1G , LBC817-40WT1G , LBC846ALT1G .
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