LBC847BDW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC847BDW1T1G
Código: 1F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SC88
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LBC847BDW1T1G datasheet
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
lbc847bdw1t1g lbc847bdw1t3g.pdf
LBC847BDW1T1G S-LBC847BDW1T1G NPN Dual General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device
lbc847bdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ
Otros transistores... LBC846ALT1G , LBC846AWT1G , LBC846BDW1T1G , LBC846BLT1G , LBC846BPDW1T1G , LBC846BWT1G , LBC847ALT1G , LBC847AWT1G , 2N3906 , LBC847BLT1G , LBC847BPDW1T1G , LBC847BTT1G , LBC847BWT1G , LBC847CDW1T1G , LBC847CLT1G , LBC847CWT1G , LBC848ALT1G .
History: 2SB1281 | LBC848BLT1G | 3TE440 | 2SB1193 | ZT2369 | LBC847CDW1T1G | LBC848BDW1T1G
History: 2SB1281 | LBC848BLT1G | 3TE440 | 2SB1193 | ZT2369 | LBC847CDW1T1G | LBC848BDW1T1G
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