LBC847BDW1T1G PDF and Equivalents Search

 

LBC847BDW1T1G Specs and Replacement

Type Designator: LBC847BDW1T1G

SMD Transistor Code: 1F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SC88

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LBC847BDW1T1G datasheet

 ..1. Size:209K  lrc

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LBC847BDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848... See More ⇒

 ..2. Size:209K  lrc

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LBC847BDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848... See More ⇒

 ..3. Size:280K  lrc

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LBC847BDW1T1G

LBC847BDW1T1G S-LBC847BDW1T1G NPN Dual General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device... See More ⇒

 ..4. Size:230K  lrc

lbc847bdw1t1g.pdf pdf_icon

LBC847BDW1T1G

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ... See More ⇒

Detailed specifications: LBC846ALT1G, LBC846AWT1G, LBC846BDW1T1G, LBC846BLT1G, LBC846BPDW1T1G, LBC846BWT1G, LBC847ALT1G, LBC847AWT1G, 2N3906, LBC847BLT1G, LBC847BPDW1T1G, LBC847BTT1G, LBC847BWT1G, LBC847CDW1T1G, LBC847CLT1G, LBC847CWT1G, LBC848ALT1G

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