LBC850BWT1G Todos los transistores

 

LBC850BWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC850BWT1G

Código: 2F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SC70

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LBC850BWT1G datasheet

 ..1. Size:278K  lrc
lbc850bwt1g.pdf pdf_icon

LBC850BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846AWT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO Vdc SOT 323 /SC 70

 7.1. Size:402K  lrc
lbc850blt1g.pdf pdf_icon

LBC850BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

 7.2. Size:402K  lrc
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf pdf_icon

LBC850BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

 7.3. Size:404K  lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf pdf_icon

LBC850BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

Otros transistores... LBC848BLT1G , LBC848BPDW1T1G , LBC848BWT1G , LBC848CDW1T1G , LBC848CLT1G , LBC848CPDW1T1G , LBC848CWT1G , LBC850BLT1G , 2SA1837 , LBC850CLT1G , LX8050QLT1G , LBSS4240LT1G , LBSS5240LT1G , LH8050QLT1G , LH8550QLT1G , LMBTH10LT1G , LMBTH10QLT1G .

History: 2SB1024 | 3TE440 | 2SB1103 | LBC847CWT1G | LBC847BLT1G | 2SB1101 | LBC848BLT1G

 

 

 

 

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