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LBC857BTT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC857BTT1G
   Código: 3F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SC89
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LBC857BTT1G Datasheet (PDF)

 ..1. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 ..2. Size:134K  lrc
lbc857btt1g.pdf pdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 7.1. Size:159K  lrc
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LBC857BTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:176K  lrc
lbc857bdw1t1g.pdf pdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36

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History: K2123 | GI2716 | 2N5136 | CTN636 | UN5116 | TD13005SMD | PUMB9

 

 
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