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LBC857BTT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC857BTT1G

Código: 3F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hfe): 220

Empaquetado / Estuche: SC89

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LBC857BTT1G Datasheet (PDF)

1.1. lbc857btt1g.pdf Size:134K _lrc

LBC857BTT1G
LBC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features • Pb-Free Packages are Available • S- Prefix for Automotive and Other Applications Requiri

3.1. lbc857bwt1g.pdf Size:279K _lrc

LBC857BTT1G
LBC857BTT1G

LESHAN RADIO COMPANY, LTD. LBC856AWT1G,BWT1G General Purpose Transistors LBC857AWT1G,BWT1G PNP Silicon CWT1G LBC858AWT1G,BWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ CWT1G SC–70 which is designed for low power surface mount S-LBC856AWT1G,BWT1G applications. S-LBC857AWT1G,BWT1G Features We declare that the mat

3.2. lbc857blt1g.pdf Size:148K _lrc

LBC857BTT1G
LBC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series • Moisture Sensitivity Level: 1 S-LBC857CLT1G • ESD Rating – Human Body Model: >4000 V Series ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. 3 • S- Prefix for Automotive and Other Applications Requiring Unique Site a

3.3. lbc857bdw1t1g.pdf Size:176K _lrc

LBC857BTT1G
LBC857BTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 • Device Marking: SOT-36

Otros transistores... LBC856ALT1G , LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G , LBC857ALT1G , LBC857AWT1G , LBC857BDW1T1G , LBC857BLT1G , TIP2955 , LBC857BWT1G , LBC857CDW1T1G , LBC857CLT1G , LBC857CWT1G , LBC858ALT1G , LBC858BDW1T1G , LBC858BLT1G , LBC858BWT1G .

 


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Introduzca al menos 1 números o letras