LBC857BTT1G - описание и поиск аналогов

 

LBC857BTT1G - Аналоги. Основные параметры


   Наименование производителя: LBC857BTT1G
   Маркировка: 3F
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 220
   Корпус транзистора: SC89

 Аналоги (замена) для LBC857BTT1G

   - подбор ⓘ биполярного транзистора по параметрам

 

LBC857BTT1G - технические параметры

 ..1. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdfpdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 ..2. Size:134K  lrc
lbc857btt1g.pdfpdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 7.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdfpdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:176K  lrc
lbc857bdw1t1g.pdfpdf_icon

LBC857BTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 Device Marking SOT-36

Другие транзисторы... LBC856ALT1G , LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G , LBC857ALT1G , LBC857AWT1G , LBC857BDW1T1G , LBC857BLT1G , 2SB817 , LBC857BWT1G , LBC857CDW1T1G , LBC857CLT1G , LBC857CWT1G , LBC858ALT1G , LBC858BDW1T1G , LBC858BLT1G , LBC858BWT1G .

History: LDTA125TET1G

 

 
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