LBC857BWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC857BWT1G
Código: 3F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hFE): 220
Encapsulados: SC70
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LBC857BWT1G datasheet
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product
lbc857bwt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC856AWT1G,BWT1G General Purpose Transistors LBC857AWT1G,BWT1G PNP Silicon CWT1G LBC858AWT1G,BWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ CWT1G SC 70 which is designed for low power surface mount S-LBC856AWT1G,BWT1G applications. S-LBC857AWT1G,BWT1G Features We declare that the mat
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
lbc857bdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 Device Marking SOT-36
Otros transistores... LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G , LBC857ALT1G , LBC857AWT1G , LBC857BDW1T1G , LBC857BLT1G , LBC857BTT1G , S9013 , LBC857CDW1T1G , LBC857CLT1G , LBC857CWT1G , LBC858ALT1G , LBC858BDW1T1G , LBC858BLT1G , LBC858BWT1G , LBC858CDW1T1G .
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