LBC857BWT1G Todos los transistores

 

LBC857BWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC857BWT1G
   Código: 3F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SC70
 

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LBC857BWT1G Datasheet (PDF)

 ..1. Size:254K  lrc
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LBC857BWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 ..2. Size:279K  lrc
lbc857bwt1g.pdf pdf_icon

LBC857BWT1G

LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat

 7.1. Size:159K  lrc
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LBC857BWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:176K  lrc
lbc857bdw1t1g.pdf pdf_icon

LBC857BWT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36

Otros transistores... LBC856BDW1T1G , LBC856BLT1G , LBC856BWT1G , LBC857ALT1G , LBC857AWT1G , LBC857BDW1T1G , LBC857BLT1G , LBC857BTT1G , 2SB817 , LBC857CDW1T1G , LBC857CLT1G , LBC857CWT1G , LBC858ALT1G , LBC858BDW1T1G , LBC858BLT1G , LBC858BWT1G , LBC858CDW1T1G .

History: 2SA210H | MJD210 | DC5143 | TED1402C | 2S39 | CSD362 | FCX753

 

 
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