LBC857BWT1G PDF and Equivalents Search

 

LBC857BWT1G Specs and Replacement

Type Designator: LBC857BWT1G

SMD Transistor Code: 3F

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SC70

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LBC857BWT1G datasheet

 ..1. Size:254K  lrc

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LBC857BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒

 ..2. Size:279K  lrc

lbc857bwt1g.pdf pdf_icon

LBC857BWT1G

LESHAN RADIO COMPANY, LTD. LBC856AWT1G,BWT1G General Purpose Transistors LBC857AWT1G,BWT1G PNP Silicon CWT1G LBC858AWT1G,BWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ CWT1G SC 70 which is designed for low power surface mount S-LBC856AWT1G,BWT1G applications. S-LBC857AWT1G,BWT1G Features We declare that the mat... See More ⇒

 7.1. Size:159K  lrc

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LBC857BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒

 7.2. Size:176K  lrc

lbc857bdw1t1g.pdf pdf_icon

LBC857BWT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 Device Marking SOT-36... See More ⇒

Detailed specifications: LBC856BDW1T1G, LBC856BLT1G, LBC856BWT1G, LBC857ALT1G, LBC857AWT1G, LBC857BDW1T1G, LBC857BLT1G, LBC857BTT1G, S9013, LBC857CDW1T1G, LBC857CLT1G, LBC857CWT1G, LBC858ALT1G, LBC858BDW1T1G, LBC858BLT1G, LBC858BWT1G, LBC858CDW1T1G

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