LMBT2222ADW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT2222ADW1T1G
Código: XX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SC88
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LMBT2222ADW1T1G datasheet
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-
lmbt2222alt1g lmbt2222alt3g.pdf
LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Dev
lmbt2222awt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a
Otros transistores... LMBT5541DW1T1G , LMBT5551DW1T1G , LMBT5551LT1G , LMBT6427LT1G , LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , BD333 , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G , LMBT2907ADW1T1G , LMBT2907ALT1G , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G .
History: BSV43A | BSW62 | BSW61 | H3203 | ZTX212BK | 2SA1052C | BSX60
History: BSV43A | BSW62 | BSW61 | H3203 | ZTX212BK | 2SA1052C | BSX60
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