LMBT2907ADW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT2907ADW1T1G
Código: 2F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC88
Búsqueda de reemplazo de transistor bipolar LMBT2907ADW1T1G
LMBT2907ADW1T1G Datasheet (PDF)
lmbt2907adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.LMBT2907DW1T1GDual General PurposeLMBT2907ADW1T1GS-LMBT2907DW1T1GTransistorS-LMBT2907ADW1T1GFeatruesWe declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 654and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGSValue1
lmbt2907lt1g lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2907awt1g lmbt2907awt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT2907ALT1GFEATURESS-LMBT2907ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERI
lmbt2907lt1g lmbt2907lt3g lmbt2907alt1g lmbt2907alt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2907awt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KTD998
History: KTD998
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050