LMBT2907ADW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT2907ADW1T1G
Código: 2F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SC88
Búsqueda de reemplazo de LMBT2907ADW1T1G
- Selecciónⓘ de transistores por parámetros
LMBT2907ADW1T1G datasheet
lmbt2907adw1t1g.pdf
LESHAN RADIO COMPANY, LTD. LMBT2907DW1T1G Dual General Purpose LMBT2907ADW1T1G S-LMBT2907DW1T1G Transistor S-LMBT2907ADW1T1G Featrues We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 6 5 4 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Value 1
lmbt2907lt1g lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G We declare that the material of product compliance with RoHS requirements. S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT2907ALT1G 3 ORDERING INFORMATION 1 Device Marki
lmbt2907awt1g lmbt2907awt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon FEATURE LMBT2907AWT1G We declare that the material of product compliance with RoHS requirements. S-LMBT2907AWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION 1 Device Marking Shipping r 2 LMBT2907A
lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT2907ALT1G FEATURES S-LMBT2907ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERI
Otros transistores... LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G , 2SC5200 , LMBT2907ALT1G , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G , LMBT3904N3T5G , LMBT3904TT1G , LMBT3904WT1G , LMBT3906DW1T1G .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
a1023 | d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor