LMBT2907ALT1G Todos los transistores

 

LMBT2907ALT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBT2907ALT1G

Código: 2F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

 Búsqueda de reemplazo de LMBT2907ALT1G

- Selecciónⓘ de transistores por parámetros

 

LMBT2907ALT1G datasheet

 ..1. Size:475K  lrc
lmbt2907lt1g lmbt2907alt1g.pdf pdf_icon

LMBT2907ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G We declare that the material of product compliance with RoHS requirements. S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT2907ALT1G 3 ORDERING INFORMATION 1 Device Marki

 ..2. Size:469K  lrc
lmbt2907alt1g.pdf pdf_icon

LMBT2907ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT2907ALT1G FEATURES S-LMBT2907ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERI

 ..3. Size:475K  lrc
lmbt2907lt1g lmbt2907lt3g lmbt2907alt1g lmbt2907alt3g.pdf pdf_icon

LMBT2907ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G We declare that the material of product compliance with RoHS requirements. S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT2907ALT1G 3 ORDERING INFORMATION 1 Device Marki

 5.1. Size:74K  lrc
lmbt2907awt1g lmbt2907awt3g.pdf pdf_icon

LMBT2907ALT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon FEATURE LMBT2907AWT1G We declare that the material of product compliance with RoHS requirements. S-LMBT2907AWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION 1 Device Marking Shipping r 2 LMBT2907A

Otros transistores... LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , LMBT2222AWT1G , LMBT2907ADW1T1G , TIP41C , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G , LMBT3904N3T5G , LMBT3904TT1G , LMBT3904WT1G , LMBT3906DW1T1G , LMBT3906LT1G .

History: DXT5551 | 2SB1118 | LBC558AP

 

 

 


History: DXT5551 | 2SB1118 | LBC558AP

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet

 

 

↑ Back to Top
.