2N6493 Todos los transistores

 

2N6493 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6493

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 500

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6493

 

2N6493 Datasheet (PDF)

1.1. 2n6493.pdf Size:131K _inchange_semiconductor

2N6493
2N6493

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6493 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector A

5.1. 2n649.pdf Size:231K _rca

2N6493

5.2. 2n6487 2n6488 2n6490 2n6491.pdf Size:151K _motorola

2N6493
2N6493

Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Plastic Power Transistors * 2N6488 PNP . . . designed for use in generalpurpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490 hFE = 20150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc 2N6491* CollectorEmitter Sustaining Voltage VCE

 5.3. 2n6497 2n6498.pdf Size:148K _motorola

2N6493
2N6493

Order this document MOTOROLA by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power *Motorola Preferred Device Transistors 5 AMPERE . . . designed for high voltage inverters, switching regulators and lineoperated POWER TRANSISTORS amplifier applications. Especially well suited for switching power supply applications. NPN SILICON High CollectorEmitt

5.4. 2n6487 2n6488 2n6490.pdf Size:52K _st

2N6493
2N6493

2N6487 2N6488/2N6490 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low 3 2 frequency switching applications. 1 The 2N6487 complementary type is 2N6490. TO-2

 5.5. 2n6486 2n6487 2n6488 2n6489 2n6490 2n6491.pdf Size:66K _central

2N6493

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.6. 2n6487 2n6488 2n6490 2n6491.pdf Size:92K _onsemi

2N6493
2N6493

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE DC Current Gain Specified to 15 Amperes - COMPLEMENTARY SILICON hFE = 20 - 150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc POWE

5.7. 2n6497-d.pdf Size:74K _onsemi

2N6493
2N6493

2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features 5 AMPERE High Collector-Emitter Sustaining Voltage - VCEO(sus) = 250 Vdc (Min) POWER TRANSISTORS Excellent DC Current Gain -

5.8. 2n6486-89 2n6490-91.pdf Size:190K _mospec

2N6493
2N6493

A A A A

5.9. 2n6497 2n6498 2n6499.pdf Size:185K _bocasemi

2N6493
2N6493

A Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com A

5.10. 2n6494.pdf Size:160K _bocasemi

2N6493
2N6493

A Boca Semiconductor Corp http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com

5.11. 2n6486-9 2n6490-1.pdf Size:267K _cdil

2N6493
2N6493

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C

5.12. 2n6490.pdf Size:109K _jmnic

2N6493
2N6493

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 DESCRIPTION ·With TO-220 package ·Complement to type 2N6487 APPLICATIONS ·It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maxi

5.13. 2n6489 2n6490 2n6491.pdf Size:155K _jmnic

2N6493
2N6493

JMnic Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION ·With TO-220 package ·Excellent safe operating area ·Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline

5.14. 2n6491.pdf Size:97K _jmnic

2N6493
2N6493

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6491 DESCRIPTION ·With TO-220 package ·Complement to type 2N6488 APPLICATIONS ·It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maxi

5.15. 2n6492.pdf Size:146K _jmnic

2N6493
2N6493

JMnic Product Specification Silicon NPN Power Transistors 2N6492 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum r

5.16. 2n6489 2n6490 2n6491.pdf Size:121K _inchange_semiconductor

2N6493
2N6493

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Excellent safe operating area Ў¤ Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Ў¤ Power amplifier and medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6489 2N6490 2N6491 Fig.1

5.17. 2n6492.pdf Size:116K _inchange_semiconductor

2N6493
2N6493

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6492 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION A

5.18. 2n6494.pdf Size:116K _inchange_semiconductor

2N6493
2N6493

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6494 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION A

5.19. 2n6497 6498 6499.pdf Size:113K _inchange_semiconductor

2N6493
2N6493

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applicatio

Otros transistores... 2N6487 , 2N6488 , 2N6489 , 2N649 , 2N6490 , 2N6491 , 2N6492 , 2N649-22 , KT829A , 2N6494 , 2N6495 , 2N649-5 , 2N6496 , 2N6497 , 2N6498 , 2N6499 , 2N65 .

 
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