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LMBT3908LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LMBT3908LT1G
   Código: 1AM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

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LMBT3908LT1G Datasheet (PDF)

 ..1. Size:220K  lrc
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LMBT3908LT1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3908LT1GPb-Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LMBT3908LT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3Device Marking ShippingLMBT3908LT1G 1AM3000/Tape & Re

 7.1. Size:414K  lrc
lmbt3904n3t5g.pdf pdf_icon

LMBT3908LT1G

LMBT3904N3T5GS-LMBT3904N3T5GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT883 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mar

 7.2. Size:1148K  lrc
lmbt3906n3t5g.pdf pdf_icon

LMBT3908LT1G

LMBT3906N3T5G3S-LMBT3906N3T5G1General Purpose Transistors PNP Silicon21. FEATURES We declare that the material of product compliance withSOT883RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR32. DEVICE MARKING AND ORDERING INF

 7.3. Size:357K  lrc
lmbt3906lt1g lmbt3906lt3g.pdf pdf_icon

LMBT3908LT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906LT1GORDERING INFORMATION3Device Marking ShippingLMBT3906LT1G 2A3000

Otros transistores... LMBT3904LT1G , LMBT3904N3T5G , LMBT3904TT1G , LMBT3904WT1G , LMBT3906DW1T1G , LMBT3906LT1G , LMBT3906TT1G , LMBT3906WT1G , 13007 , LMBT4401DW1T1G , LMBT4401LT1G , LMBT4401WT1G , LMBT4403DW1T1G , LMBT4403LT1G , LMBT4403WT1G , LMBT4413DW1T1G , LNST3904F3T5G .

History: MMBT4403W | 2SD1639

 

 
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