LMBT3908LT1G Specs and Replacement
Type Designator: LMBT3908LT1G
SMD Transistor Code: 1AM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
LMBT3908LT1G Substitution
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LMBT3908LT1G datasheet
..1. Size:220K lrc
lmbt3908lt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3908LT1G Pb-Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT3908LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Device Marking Shipping LMBT3908LT1G 1AM 3000/Tape & Re... See More ⇒
7.1. Size:414K lrc
lmbt3904n3t5g.pdf 

LMBT3904N3T5G S-LMBT3904N3T5G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT883 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mar... See More ⇒
7.2. Size:1148K lrc
lmbt3906n3t5g.pdf 

LMBT3906N3T5G 3 S-LMBT3906N3T5G 1 General Purpose Transistors PNP Silicon 2 1. FEATURES We declare that the material of product compliance with SOT883 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR 3 2. DEVICE MARKING AND ORDERING INF... See More ⇒
7.3. Size:357K lrc
lmbt3906lt1g lmbt3906lt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906LT1G ORDERING INFORMATION 3 Device Marking Shipping LMBT3906LT1G 2A 3000... See More ⇒
7.4. Size:590K lrc
lmbt3904lt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904LT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904LT1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU... See More ⇒
7.5. Size:584K lrc
lmbt3906wt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906WT1G FEATURES S-LMBT3906WT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERING I... See More ⇒
7.6. Size:222K lrc
lmbt3904tt1g lmbt3904tt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking ... See More ⇒
7.7. Size:643K lrc
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3904LT1G Pb-Free Lead Finish S-LMBT3904LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable... See More ⇒
7.8. Size:203K lrc
lmbt3906tt1g lmbt3906tt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements. LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906TT1G ORDERING INFORMATION Device Mark... See More ⇒
7.9. Size:203K lrc
lmbt3906tt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements. LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906TT1G ORDERING INFORMATION Device Mark... See More ⇒
7.11. Size:358K lrc
lmbt3904lt1g lmbt3904lt3g.pdf 

LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic... See More ⇒
7.13. Size:632K lrc
lmbt3906lt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G S-LMBT3906LT1G FEATURES 1) We declare that the material of product compliant with 3 RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERING I... See More ⇒
7.14. Size:221K lrc
lmbt3904tt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking ... See More ⇒
7.15. Size:554K lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf 

LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi... See More ⇒
7.16. Size:616K lrc
lmbt3904wt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904W T1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904W T1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. 1 DEVICE MARKING AND RESISTOR ... See More ⇒
7.17. Size:471K lrc
lmbt3904wt1g lmbt3904wt3g.pdf 

LMBT3904WT1G S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic... See More ⇒
7.18. Size:506K lrc
lmbt3904dw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin off of our popular LMBT3904DW1T1G SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 S-LMBT3904DW1T1G six leaded surface mount package. By putting two discrete devices in one package , this device is ideal fo... See More ⇒
7.19. Size:243K inchange semiconductor
lmbt3904lt1g.pdf 

isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION Low Noise Figure NF = 5 dB(MAX) @V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0k CE C S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: LMBT3904LT1G, LMBT3904N3T5G, LMBT3904TT1G, LMBT3904WT1G, LMBT3906DW1T1G, LMBT3906LT1G, LMBT3906TT1G, LMBT3906WT1G, C5198, LMBT4401DW1T1G, LMBT4401LT1G, LMBT4401WT1G, LMBT4403DW1T1G, LMBT4403LT1G, LMBT4403WT1G, LMBT4413DW1T1G, LNST3904F3T5G
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