DTC123 Todos los transistores

 

DTC123 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC123

Código: A8J

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.246 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3

Encapsulados: SOT23

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DTC123 datasheet

 ..1. Size:282K  first silicon
dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf pdf_icon

DTC123

DTC 101 108 SEMICONDUCTOR DTC 110 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi

 0.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

DTC123

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 0.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

DTC123

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 0.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

DTC123

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design

Otros transistores... DTC110 , DTC111 , DTC112 , DTC113Z , DTC114 , DTC117 , DTC118 , DTC119 , 2N2907 , DTC124 , DTC137 , DTC301 , DTC302 , DTC303 , DTC304 , DTC305 , DTC306 .

History: 2N916DCSM

 

 

 


History: 2N916DCSM

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