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DTD123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTD123

Código: E4

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Ganancia de corriente contínua (hfe): 250

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar DTD123

 

DTD123 Datasheet (PDF)

0.1. pdtd123e ser.pdf Size:123K _philips

DTD123
DTD123

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

0.2. pdtd123yk pdtd123ys.pdf Size:124K _nxp

DTD123
DTD123

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

 0.3. pdtd123t.pdf Size:121K _nxp

DTD123
DTD123

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

0.4. pdtd123y.pdf Size:124K _nxp

DTD123
DTD123

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

 0.5. pdtd123ek pdtd123es.pdf Size:123K _nxp

DTD123
DTD123

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

0.6. pdtd123tk pdtd123ts.pdf Size:120K _nxp

DTD123
DTD123

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

0.7. dtd123yk.pdf Size:156K _rohm

DTD123
DTD123

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD123YK0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)

0.8. dtd123ek dtd123es.pdf Size:58K _rohm

DTD123
DTD123

TransistorsDigital transistors (built-in resistors)DTD123EK / DTD123ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasing of theinput. They

0.9. dtd123tk.pdf Size:329K _rohm

DTD123
DTD123

DTD123TKDatasheetNPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueCollector VCEO40VBase IC500mAEmitter R 2.2kWDTD123TK SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (

0.10. dtd123ek.pdf Size:136K _rohm

DTD123
DTD123

500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD123EK2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistors

0.11. ddtd123eu.pdf Size:167K _diodes

DTD123
DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

0.12. ddtd123ec.pdf Size:70K _diodes

DTD123
DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

0.13. ddtd123yu.pdf Size:167K _diodes

DTD123
DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

0.14. ddtd123tc.pdf Size:70K _diodes

DTD123
DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

0.15. ddtd123tu.pdf Size:167K _diodes

DTD123
DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

0.16. ddtd123yc.pdf Size:70K _diodes

DTD123
DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

0.17. dtd123y.pdf Size:131K _utc

DTD123
DTD123

UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3(BUILT-IN RESISTORS) 1122 FEATURES SOT-323SOT-23* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1TO-92 ORDERING INFORMATION Ordering Number

0.18. dtd123y.pdf Size:1033K _wietron

DTD123
DTD123

DTD123YBias Resistor Transistor NPN SiliconCOLLECTOR33P b Lead(Pb)-FreeR 111BASER 222EMITTERSOT-23Absolute maximum ratings (TA = 25C)Parameter Symbol Limits UnitSupply voltage Vcc 50 V-5~+12Input voltage VIN VOutput current IC 500 mAPower dissipation Pd 200 mWJunction temperature Tj 150Storage temperature Tstg -55~+150Electrical characteristics

0.19. ldtd123eet1g.pdf Size:367K _lrc

DTD123
DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

0.20. ldtd123tet1g.pdf Size:326K _lrc

DTD123
DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

0.21. ldtd123yet1g.pdf Size:350K _lrc

DTD123
DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

0.22. dtd123.pdf Size:193K _first_silicon

DTD123
DTD123

SEMICONDUCTORDTD123TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network Applications Inverter, Interface, DriverOUT Features 1) Built-in bias resistors enable the configuration of anGNDinverter circuit without connecting external inputINresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors wi

0.23. dtd123yua.pdf Size:319K _kexin

DTD123

SMD Type TransistorsDigital TransistorsDTD123YUA (KDTD123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

0.24. chdtd123tkgp.pdf Size:103K _chenmko

DTD123
DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

0.25. chdtd123ekgp.pdf Size:98K _chenmko

DTD123
DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

0.26. chdtd123ykgp.pdf Size:138K _chenmko

DTD123
DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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