DTD123 Todos los transistores

Introduzca al menos 3 números o letras

DTD123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTD123

Código: E4

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Ganancia de corriente contínua (hfe): 250

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar DTD123

 

DTD123 Datasheet (PDF)

1.1. pdtd123e ser.pdf Size:123K _philips

DTD123
DTD123

PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k?, R2 = 2.2 k? Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123EK SOT346 SC-59A TO-236 PDTB123EK PDTD123ES[1] SOT54 SC-43A TO-92 PDTB12

1.2. pdtd123t.pdf Size:121K _nxp

DTD123
DTD123

PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 03 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123TK SOT346 SC-59A TO-236 PDTB123TK PDTD123TS[1] SOT54 SC-43A TO-92 PD

1.3. pdtd123y.pdf Size:124K _nxp

DTD123
DTD123

PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTD123YK SOT346 SC-59A TO-236 PDTB123YK PDTD123YS[1] SOT54 SC-43A TO-92

1.4. dtd123ek.pdf Size:136K _rohm

DTD123
DTD123

500mA / 50V Digital transistors (with built-in resistors) DTD123EK ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTD123EK 2.9 1.1 ? Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8 circuit without connecting external input resistors (see (3) equivalent circuit). 2)The bias resistors consist of thin-film resistors with comp

1.5. dtd123tk.pdf Size:133K _rohm

DTD123
DTD123

500mA / 40V Digital transistors (with built-in resistors) DTD123TK ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTD123TK 2.9 1.1 ? Features 0.4 0.8 1)Built-in bias resistors enable the configuration of an inverter (3) circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with co

1.6. dtd123yk.pdf Size:156K _rohm

DTD123
DTD123

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1 DTD123YK 0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1) iso

1.7. dtd123y.pdf Size:131K _utc

DTD123
DTD123

UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3 (BUILT-IN RESISTORS) 1 1 2 2 FEATURES SOT-323 SOT-23 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1 TO-92 ORDERING INFORMATION Ordering Number Pin

1.8. dtd123y.pdf Size:1033K _wietron

DTD123
DTD123

DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free R 1 1 1 BASE R 2 2 2 EMITTER SOT-23 Absolute maximum ratings (TA = 25?C) Parameter Symbol Limits Unit Supply voltage Vcc 50 V -5~+12 Input voltage VIN V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55~+150 Electrical characteristics (TA

1.9. dtd123.pdf Size:193K _first_silicon

DTD123
DTD123

SEMICONDUCTOR DTD123 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver OUT • Features 1) Built-in bias resistors enable the configuration of an GND inverter circuit without connecting external input IN resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors wi

1.10. dtd123yua.pdf Size:319K _kexin

DTD123

SMD Type Transistors Digital Transistors DTD123YUA (KDTD123YUA) ■ Features ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) ● The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

Otros transistores... DTC710 , DTC711 , DTC714 , DTC717 , DTC722 , DTD101 , DTD102 , DTD118 , 9014 , DTD124 , DWA402 , DWA403 , DWA404 , DWA407 , DWA411 , DWA410 , DWA423 .

 


DTD123
  DTD123
  DTD123
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |


Introduzca al menos 1 números o letras