DTD123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTORDTD123TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network Applications Inverter, Interface, DriverOUT Features 1) Built-in bias resistors enable the configuration of anGNDinverter circuit without connecting external inputINresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors wi

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

DTD123TKDatasheetNPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueCollector VCEO40VBase IC500mAEmitter R 2.2kWDTD123TK SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (

TransistorsDigital transistors (built-in resistors)DTD123EK / DTD123ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasing of theinput. They

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD123YK0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)

500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD123EK2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistors

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3(BUILT-IN RESISTORS) 1122 FEATURES SOT-323SOT-23* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1TO-92 ORDERING INFORMATION Ordering Number

DTD123YBias Resistor Transistor NPN SiliconCOLLECTOR33P b Lead(Pb)-FreeR 111BASER 222EMITTERSOT-23Absolute maximum ratings (TA = 25C)Parameter Symbol Limits UnitSupply voltage Vcc 50 V-5~+12Input voltage VIN VOutput current IC 500 mAPower dissipation Pd 200 mWJunction temperature Tj 150Storage temperature Tstg -55~+150Electrical characteristics

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

SMD Type TransistorsDigital TransistorsDTD123YUA (KDTD123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi