Справочник транзисторов. DTD123

 

Биполярный транзистор DTD123 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTD123
   Маркировка: E4
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: SOT23

 Аналоги (замена) для DTD123

 

 

DTD123 Datasheet (PDF)

 ..1. Size:193K  first silicon
dtd123.pdf

DTD123 DTD123

SEMICONDUCTORDTD123TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network Applications Inverter, Interface, DriverOUT Features 1) Built-in bias resistors enable the configuration of anGNDinverter circuit without connecting external inputINresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors wi

 0.1. Size:123K  philips
pdtd123e ser.pdf

DTD123 DTD123

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

 0.2. Size:121K  nxp
pdtd123t.pdf

DTD123 DTD123

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

 0.3. Size:120K  nxp
pdtd123tk pdtd123ts.pdf

DTD123 DTD123

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

 0.4. Size:124K  nxp
pdtd123y.pdf

DTD123 DTD123

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

 0.5. Size:123K  nxp
pdtd123ek pdtd123es.pdf

DTD123 DTD123

PDTD123E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123EK SOT346 SC-59A TO-236 PDTB123EKPDTD123ES[1] SOT54 SC-43A TO-92

 0.6. Size:124K  nxp
pdtd123yk pdtd123ys.pdf

DTD123 DTD123

PDTD123Y seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123YK SOT346 SC-59A TO-236 PDTB123YKPDTD123YS[1] SOT54 SC-43A TO-92

 0.7. Size:329K  rohm
dtd123tk.pdf

DTD123 DTD123

DTD123TKDatasheetNPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueCollector VCEO40VBase IC500mAEmitter R 2.2kWDTD123TK SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (

 0.8. Size:58K  rohm
dtd123ek dtd123es.pdf

DTD123 DTD123

TransistorsDigital transistors (built-in resistors)DTD123EK / DTD123ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasing of theinput. They

 0.9. Size:156K  rohm
dtd123yk.pdf

DTD123 DTD123

Digital transistors (built-in resistors) DTD123YK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD123YK0.4 0.8 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete (2) (1)

 0.10. Size:136K  rohm
dtd123ek.pdf

DTD123 DTD123

500mA / 50V Digital transistors (with built-in resistors) DTD123EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD123EK2.9 1.1 Features 1)Built-in bias resistors enable the configuration of an inverter 0.4 0.8circuit without connecting external input resistors (see (3)equivalent circuit). 2)The bias resistors consist of thin-film resistors

 0.11. Size:167K  diodes
ddtd123eu.pdf

DTD123 DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 0.12. Size:167K  diodes
ddtd123tu.pdf

DTD123 DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 0.13. Size:70K  diodes
ddtd123yc.pdf

DTD123 DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 0.14. Size:167K  diodes
ddtd123yu.pdf

DTD123 DTD123

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 0.15. Size:70K  diodes
ddtd123ec.pdf

DTD123 DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 0.16. Size:70K  diodes
ddtd123tc.pdf

DTD123 DTD123

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 0.17. Size:131K  utc
dtd123y.pdf

DTD123 DTD123

UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN SILICON TRANSISTOR DIGITAL TRANSISTORS 3 3(BUILT-IN RESISTORS) 1122 FEATURES SOT-323SOT-23* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT 1TO-92 ORDERING INFORMATION Ordering Number

 0.18. Size:1033K  wietron
dtd123y.pdf

DTD123 DTD123

DTD123YBias Resistor Transistor NPN SiliconCOLLECTOR33P b Lead(Pb)-FreeR 111BASER 222EMITTERSOT-23Absolute maximum ratings (TA = 25C)Parameter Symbol Limits UnitSupply voltage Vcc 50 V-5~+12Input voltage VIN VOutput current IC 500 mAPower dissipation Pd 200 mWJunction temperature Tj 150Storage temperature Tstg -55~+150Electrical characteristics

 0.19. Size:369K  lrc
ldtd123ylt1g.pdf

DTD123 DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 0.20. Size:350K  lrc
ldtd123yet1g.pdf

DTD123 DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 0.21. Size:326K  lrc
ldtd123tet1g.pdf

DTD123 DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 0.22. Size:367K  lrc
ldtd123eet1g.pdf

DTD123 DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 0.23. Size:369K  lrc
ldtd123ylt1g ldtd123ylt3g.pdf

DTD123 DTD123

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 0.24. Size:319K  kexin
dtd123yua.pdf

DTD123

SMD Type TransistorsDigital TransistorsDTD123YUA (KDTD123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

 0.25. Size:98K  chenmko
chdtd123ekgp.pdf

DTD123 DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 0.26. Size:103K  chenmko
chdtd123tkgp.pdf

DTD123 DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 0.27. Size:138K  chenmko
chdtd123ykgp.pdf

DTD123 DTD123

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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History: 2N2048A

 

 
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