FTA1220 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTORFTA1220/ATECHNICAL DATADFTA1220/1220A TRANSISTOR (PNP) A E CF GDIM MILLIMETERSFEATURES BA 8.3 MAXB 11 30.3C .15 TYP Audio frequency power amplifier 1 2 3D 3.20.2E 2.00.2H F 2.80.1 High frequency power amplifier IG 3.20.1H 1.270.1KI 1. 00.1 Complement to FTC2690/FTC2690A K 15.50.2L 0.760.1M 2.28 TYPL

SEMICONDUCTORFTA1274 TECHNICAL DATATO 92L FTA1274 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Complementary to FTC3227 3. BASE General Purpose Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current

SEMICONDUCTORFTA1271TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERS High DC Current Gain A 4.70 MAXEB 4.80 MAXG Complementary to KTC3203 C 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HSymbo Parameter Value Unit J 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage -

SEMICONDUCTORFTA1241TECHNICAL DATAFTA1241 TRANSISTOR (PNP) BFEATURES Low Collector Saturation Voltage High Power Dissipation EDIM MILLIMETERSA 8.2 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAXC 1.58 MAXD 0.55 MAXSymbol Parameter Value Unit E 0.7 TYPF 1.27 TYPG 2.54 TYPVCBO Collector-Base Voltage -35 V FH 14.20 MAX GJ 0.45 MAX

SEMICONDUCTORFTA1298TECHNICAL DATAGeneral Purpose TransistorsLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100~320. Low Saturation Voltage3: VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA).Suitable for Driver Stage of Small Motor.2Complementary to FTC3265.1Small Package.SOT 23MAXIMUM RATING (Ta=25)

SEMICONDUCTORFTA1266TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTC3198.DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage -60 V J 14.00 + 0.50L 2.30F

SEMICONDUCTORFTA1268TECHNICAL DATAB CDIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 + 0.50L 2.30F FM 0.51 MAX1 2 3 1. EMITTER2. COLLECTOR3. BASETO-922013. 08. 05 Revision No : 0 1/2AJCLMFTA12682013. 08. 05 Revision No : 0 2/2

SEMICONDUCTORFTA1275 TECHNICAL DATABFTA1275 TRANSISTOR (PNP) EDIM MILLIMETERSFEATURES A 8.2 MAXDB 5.1 MAX High Voltage C 1.58 MAXD 0.55 MAX Large Continuous Collector Current Capability E 0.7 TYPF 1.27 TYPG 2.54 TYP Complementary to FTC3228 FH 14.20 MAX GJ 0.45 MAX L 4.10 MAX C1. EMITTER L1 2 32. COLLECTOR 3. BASE TO-92LMAXIMUM RATINGS

SEMICONDUCTORFTA1270TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERSComplementary NPN Type available (FTC3202) A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85 MAXIMUM RATINGS (TA=25 unless otherwise noted) H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Units L 2.30F FM 0.51 MAXVCBO Collector-Base V